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The Effect of Low Energy Electron and UV/VIS Radiation Aging on the Electron Emission Properties and Breakdown of Thin-film Dielectrics

机译:低能电子和UV / VIS辐射时效对薄膜电介质电子发射特性和击穿的影响

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摘要

Studies of secondary and backscattered electron yield curves of thin-film dielectrics have recently been made using pulsed, low current electron beam methods to minimize insulator charging. These capabilities have allowed us to investigate the evolution of surface and internal charge profiles as a function of low energy electron (keV) pulsed-electron fluence to determine how quickly insulators charge, and how this can affect subsequent electron emission properties. We have also studied critical incident electron energies that result in electrical breakdown of insulator materials and the effect of breakdown on subsequent emission, charging and conduction. The qualitative physics of such processes in solid dielectrics has long been known; this work begins to place such studies on a quantitative basis.
机译:最近已使用脉冲,低电流电子束方法对绝缘体的二次和反向散射电子产率曲线进行了研究,以最大程度地减少绝缘体的电荷。这些功能使我们能够根据低能电子(keV)脉冲电子注量来研究表面电荷和内部电荷分布的演变,以确定绝缘体的充电速度,以及这如何影响随后的电子发射性能。我们还研究了导致绝缘子材料发生电击穿的临界入射电子能量,以及击穿对后续发射,充电和传导的影响。固体电介质中此类过程的定性物理学早已为人所知。这项工作开始将这种研究定量化。

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